Authors: V. Quenette, D. Rideau, R. Clerc, C. Tavernier, H. Jaouen
Affilation: ST Microelectronics, France
Pages: 558 - 561
Keywords: surface potential based models, dynamic charge sharing, short channel effects, body effect
Technology tuning by design means have been recently pointed out. Particularly, the possibility of back bias polarization (VB) to tune the threshold voltage (VT) has been commonly adopted in advanced devices. As a consequence the core of the compact models require an accurate description of the VT shift due to VB under low and high drain voltages (VD) but also an accurate subthreshold slope and drain induced barrier lowering (DIBL) modeling. We propose a “dynamic charge sharing model” for surface potential based models in order to take into account these effects. This model is compared to experimental data from the 45 and 65 nm node.