An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

	Nanotech 2009 Vol. 3 Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling Chapter 5: Modeling and Simulation of Micro and Nano Systems
	An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET
Authors:	Y. Che, L. Zhang, X. Zhou, J. He, M. Chan
Affilation:	Peking University, CN
Pages:	371 - 374
Keywords:	nanowire, non-classical MOSFETs, schottky barrier device, device physics, modeling, simulation
Abstract:	In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics of the silicon-based nanowire Schottky barrier MOSFETs with different geometry and structure parameters and extensive comparisons with the 2-D numerical simulation show that the presented model is valid for all operation regions of such a device with a variety of geometry parameters and different work function configurations of the metal source (drain). Such a compact model may be useful for us to benchmark nanowire Schottky barrier MOSFET circuit performance and device structure optimization.
ISBN:	978-1-4398-1784-1
Pages:	694
Hardcopy:	$179.95

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