Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

	Nanotech 2009 Vol. 3 Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling Chapter 5: Modeling and Simulation of Micro and Nano Systems
	Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case
Authors:	X. Zhou, J. Zhang, L. Zhang, C. Ma, J. He, M. Chan
Affilation:	peking university, CN
Pages:	367 - 370
Keywords:	nanoscale device, non-classical MOSFETs, DG-MOSFETs, modeling and simulation
Abstract:	In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model predicts different DG MOSEET operation modes and the characteristics, which are well verified by the 2-D numerical simulator in different cases. We also analyze the model limitation and further improved direction.
ISBN:	978-1-4398-1784-1
Pages:	694
Hardcopy:	$179.95

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