Nanotech 2009 Vol. 3
Nanotech 2009 Vol. 3
Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling

Modeling and Simulation of Micro and Nano Systems Chapter 5

Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

Authors: S. Martinie, M.-A. Jaud, D. Munteanu, O. Thomas, G. Le Carval, J.L. Autran

Affilation: CEA LETI-MINATEC, France

Pages: 359 - 362

Keywords: double-gate MOSFETs, ballistic transport, quasi-ballistic transport, SRAM, CMOS inverter

Abstract:
The impact of ballistic/quasi-ballistic carrier transport on the switch of a CMOS inverter and on the noise margin of a 6T SRAM cell, both based on Double-Gate MOSFETs (DGMOS), is analysed using mixed-mode simulation. To simulate ballistic and quasi-ballistic transport, we introduced the pioneering approach of quasi-ballistic mobility proposed by Rhew et al into a TCAD simulator. Finally, we demonstrate the direct relation between the nature of transport in the channel and the 6T SRAM cell static performances.

Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

ISBN: 978-1-4398-1784-1
Pages: 694
Hardcopy: $179.95