Nano Science and Technology Institute
Nanotech 2009 Vol. 3
Nanotech 2009 Vol. 3
Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
 
Chapter 5: Modeling and Simulation of Micro and Nano Systems
 

Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

Authors:S. Martinie, M.-A. Jaud, D. Munteanu, O. Thomas, G. Le Carval, J.L. Autran
Affilation:CEA LETI-MINATEC, FR
Pages:359 - 362
Keywords:double-gate MOSFETs, ballistic transport, quasi-ballistic transport, SRAM, CMOS inverter
Abstract:The impact of ballistic/quasi-ballistic carrier transport on the switch of a CMOS inverter and on the noise margin of a 6T SRAM cell, both based on Double-Gate MOSFETs (DGMOS), is analysed using mixed-mode simulation. To simulate ballistic and quasi-ballistic transport, we introduced the pioneering approach of quasi-ballistic mobility proposed by Rhew et al into a TCAD simulator. Finally, we demonstrate the direct relation between the nature of transport in the channel and the 6T SRAM cell static performances.
ISBN:978-1-4398-1784-1
Pages:694
Hardcopy:$179.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map