Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell

	Nanotech 2009 Vol. 3 Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling Chapter 5: Modeling and Simulation of Micro and Nano Systems
	Performance study of Ballistic and Quasi-Ballistic on Double-Gate MOSFETs 6T SRAM cell
Authors:	S. Martinie, M.-A. Jaud, D. Munteanu, O. Thomas, G. Le Carval, J.L. Autran
Affilation:	CEA LETI-MINATEC, FR
Pages:	359 - 362
Keywords:	double-gate MOSFETs, ballistic transport, quasi-ballistic transport, SRAM, CMOS inverter
Abstract:	The impact of ballistic/quasi-ballistic carrier transport on the switch of a CMOS inverter and on the noise margin of a 6T SRAM cell, both based on Double-Gate MOSFETs (DGMOS), is analysed using mixed-mode simulation. To simulate ballistic and quasi-ballistic transport, we introduced the pioneering approach of quasi-ballistic mobility proposed by Rhew et al into a TCAD simulator. Finally, we demonstrate the direct relation between the nature of transport in the channel and the 6T SRAM cell static performances.
ISBN:	978-1-4398-1784-1
Pages:	694
Hardcopy:	$179.95

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