Nanotech 2009 Vol. 3
Nanotech 2009 Vol. 3
Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling

Modeling and Simulation of Micro and Nano Systems Chapter 5

Simulation of Decrease in Lag phenomena and Current Slump of Field-Plate GaAs FETs

Authors: K. Itagaki, H. Ueda, Y. Terao, K. Horio

Affilation: Shibaura Institute of Technology, Japan

Pages: 355 - 358

Keywords: GaAs, FET, trap, current slump, drain lag, field plate

Abstract:
Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which a deep donor “EL2” and a shallow acceptor are considered in a semi-insulating substrate, and the results are compared between the two cases with and without a field plate. It is shown that substrate-related drain lag is reduced by introducing a field plate because trapping effects become smaller. It is also shown that current slump and gate lag are also reduced in the field-plate structure. The dependence on field-plate length and SiO2 passivation layer thickness is also studied, suggesting that there are optimum values for these parameters to minimize the substrate-related current slump and also to maintain high frequency performance of GaAs MESFETs.

Simulation of Decrease in Lag phenomena and Current Slump of Field-Plate GaAs FETs

ISBN: 978-1-4398-1784-1
Pages: 694
Hardcopy: $179.95