Gallium Nitride Nanowire Enhanced High Intensity Discharge Luminance System

	Nanotech 2009 Vol. 1 Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics Chapter 8: Nano Electronics and Photonics
	Gallium Nitride Nanowire Enhanced High Intensity Discharge Luminance System
Authors:	J.T.H. Tsai, Z.-J. Liao
Affilation:	Tatung University, TW
Pages:	648 - 651
Keywords:	gallium nitride, nanowire, high intensity discharge lamp
Abstract:	We produce an mercury-free, high efficiency HID lamp with the GaN nanostructure enhancer embedded. These dense GaN nanowires embedded into the HID electrodes can reduce 25% of ignition voltage and enhance the 17% of efficiency from our illumination system. Gallium ions will released from GaN nanowires when arc discharge ignition. These results represent a route to use nanomaterials with a conventional product to develop high efficiency lighting system.
ISBN:	978-1-4398-1782-7
Pages:	702
Hardcopy:	$179.95

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