Authors: J.T.H. Tsai, Z.-J. Liao
Affilation: Tatung University, Taiwan
Pages: 648 - 651
Keywords: gallium nitride, nanowire, high intensity discharge lamp
We produce an mercury-free, high efficiency HID lamp with the GaN nanostructure enhancer embedded. These dense GaN nanowires embedded into the HID electrodes can reduce 25% of ignition voltage and enhance the 17% of efficiency from our illumination system. Gallium ions will released from GaN nanowires when arc discharge ignition. These results represent a route to use nanomaterials with a conventional product to develop high efficiency lighting system.