Atomistic Electrostatic Simulations Using Spice

	Nanotech 2009 Vol. 1 Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics Chapter 8: Nano Electronics and Photonics
	Atomistic Electrostatic Simulations Using Spice
Authors:	L. Forbes, D.A. Miller, M.E. Jacob
Affilation:	Oregon State University, US
Pages:	606 - 608
Keywords:	discrete dopant atoms, MOSFET, percolation conduction, 3D electrostatic models
Abstract:	The technique employed here to describe the three dimensional electrostatic field in a nano-scale CMOS n-channel FET near the threshold of conduction is using SPICE to solve the electrostatic equations. An atomistic solution will be demonstrated that shows the local variations in potential due to the electrostatic charge of discrete dopant atoms. This will be applied to a dual gated or fin type MOSFET device structure. It will be demonstated that conduction in nanoscale devices occurs not a a uniform sheet of charge but rather as a number of narrow “percolation” or “filamentary” channels.
ISBN:	978-1-4398-1782-7
Pages:	702
Hardcopy:	$179.95

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