Nanotech 2009 Vol. 1
Nanotech 2009 Vol. 1
Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics

Nano Electronics and Photonics Chapter 8

Enhanced UV Light Emission in Silicon nanoparticles

Authors: A. Singh, K.G. Grycznski, B. Rout, J. Li, F. McDaniel, A. Neogi, G. Sahu, D.P. Mahapatra

Affilation: University of North Texas, United States

Pages: 570 - 573

Keywords: silicon photonics, UV emission, fluorescence

UV light emission comparable to GaN based semiconductor is observed from gold-implanted Si (100) semiconductors. A low energy Au implant forming the Si nanoparticles or quantum dots are been irradiated and recrystallized by a MeV range Au-Ion beam. Si quantum dots are formed which shows exciton transitions at low temperature. These Si quantum dots emit with a peak emission of ~ 3.27 eV at 300 K, which is shifted to about 3.37 eV at 77 K. Time resolved photoluminescence measurements from Si nanoparticles reveal ns-ps decay features exhibiting strong radiative recombination process. These decay features are significantly faster than conventional amorphous or poly-Si nanocrystals which are dominated by Auger recombination process in the micro-second range. This role of surface-plasmon polariton induced enhancement in the PL emission process is also discussed

Enhanced UV Light Emission in Silicon nanoparticles

ISBN: 978-1-4398-1782-7
Pages: 702
Hardcopy: $179.95