Nanotech 2009 Vol. 1
Nanotech 2009 Vol. 1
Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics

MEMS and NEMS Chapter 5

Micro-Fabricated Electrostatic Voltage Sensor with a Thin Bulk-Silicon Device Layer

Authors: J. Dittmer, R. Judaschke, S. Büttgenbach

Affilation: Technische Universität Braunschweig, Germany

Pages: 472 - 475

Keywords: RF MEMS, RMS sensor, SOI, batch process

Abstract:
Micro-fabricated sensors made of a 20 µm thick bulk-silicon device layer for electrostatic voltage measurements are presented. A rotational, seesaw-like actuator with two electrically isolated electrodes on its ends forming parallel-plate capacitors with opposing electrodes in close proximity. When a voltage is applied between a pair of electrodes, the plate is subjected to a force proportional to the square of the applied voltage, causing it to turn to an equilibrium position with the restoring spring force of the suspension. From the measured position the original voltage can be calculated or compared with the displacement of a known reference voltage. Fabrication process and measurement results are presented and related to the theory.

Micro-Fabricated Electrostatic Voltage Sensor with a Thin Bulk-Silicon Device Layer

ISBN: 978-1-4398-1782-7
Pages: 702
Hardcopy: $179.95