Authors: H.Y. Park
Affilation: KAIST, Korea
Pages: 342 - 344
Keywords: carbon quantum dots, fabrication, TPIE
The carbon quantum dot, one of Carbon based materials, has attracted tremendous attention from engineers and scientist. Carbon nano-dots have been fabricated by various method, but they cannot adjust and control the size of dots. we have developed a novel method, i.e.,Thermo-electrical Pulse Induced Evaporation (TPIE) of synthesizing a various kind of nanostructures. The thermal energy and electrical pulse are simultaneously introduced into a source material at a high vacuum condition and then source materials are evaporated. We will report the structural cheracteristics of carbon nano-dots fabricated by TPIE method. Carbon nano-dots were directly fabricated on the doped Si (111) crystal surface for measuring electrical properties of the dots. The formation of the dots was confirmed using atomic force microscope (AFM), scanning electron microscope (SEM) and high resolution transmission electron microscope (HRTEM). Raman spectroscopy could help confirm the quantum sized dots. The electrical properties and shape of dots were evaluated from scanning tunneling microscope (STM) observations. The dots after sonicating were treated in the Polyethylene Glycol solvent for observing photoluminescence effect. It is expected that the size distribution of carbon nano-dot can be contolled as functions of TPIE parameters.