Agarwal N., Bandhawakar G.
Amity School of Engineering & Technology, Amity University, IN
Keywords: double-gate, MOSFET
ABSTRACT A CMOS scaling is approaching the limit imposed by gate oxide tunneling. Double gate MOSFET (DGMOSFET) with undoped body has become very attractive for scaling CMOS devices down to nanometer size. Device simulation predict that double gate MOSFET is extendable to a gate length of 20nm compared with a single-gate (SG) MOSFET,the double gate MOSFET has several advantages such as reduced short-channel effect, ideal sub threshold slope and doubling the channel drive per deice layout. In the present paper a 1-D approach has been carried out for doped double gate MOSFET. Complete theoretical analysis has been carried out for Gaussian doping profile using 1-D Possion’s equation. Analytical solution has been derived for the charge density for a doped double gate MOSFET.A relation has been obtained between potential and charge density. Results have been plotted for electric potential and electron density for different values of position in Si channel, considering tox=2nm (Oxide thickness) and W=20nm(Gate width).Obtained results are in good agreement with undoped DGMOSFET .Result are 10 times better for doped body at lower voltage than undoped DGMOSFET. Thus this new model can be a better approach for low power, low voltage devices. Topic Area:Nano Devices and Systems
Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics
Published: May 3, 2009
Pages: 231 - 233
Industry sector: Advanced Materials & Manufacturing
Topic: Advanced Materials for Engineering Applications
ISBN: 978-1-4398-1782-7