Nanotech 2009 Vol. 1
Nanotech 2009 Vol. 1
Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics

Nanoparticles Chapter 2

Quantum Dot (QD) gate Si-FET with Self Assembled GeOX Cladded Germanium Quantum Dots

Authors: M. Gogna, F. AlAmoody, S. Karmakar, F. Papadimitrakopoulos, F. Jain

Affilation: University of Connecticut, United States

Pages: 163 - 165

Keywords: self assembly, germanium quantum dots, quantum dot FET, germanium FET

Abstract:
This paper presents preliminary data on the transfer and output characteristics of a GeOXcladded Ge quantum dot (QD) gate Si MOSFET. The MOSFET is formed by depositing cladded QDs above the SiO2 gate insulator formed on p- Si region, sandwiched between n-type source and drain. Ge (~ 2 to 8 nm) nanoparticles, cladded with GeOX (~1nm) layers, are deposited using site-specific self-assembly. In addition, threshold shift in a nonvolatile memory structure, having cladded Ge dots, is also presented. The aim here is to fabricate floating QD gate high performance nonvolatile memory scalable to 22 nm processing.

Quantum Dot (QD) gate Si-FET with Self Assembled GeOX Cladded Germanium Quantum Dots

ISBN: 978-1-4398-1782-7
Pages: 702
Hardcopy: $179.95