Quantum Dot (QD) gate Si-FET with Self Assembled GeOX Cladded Germanium Quantum Dots

	Nanotech 2009 Vol. 1 Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics Chapter 2: Nanoparticles
	Quantum Dot (QD) gate Si-FET with Self Assembled GeOX Cladded Germanium Quantum Dots
Authors:	M. Gogna, F. AlAmoody, S. Karmakar, F. Papadimitrakopoulos, F. Jain
Affilation:	University of Connecticut, US
Pages:	163 - 165
Keywords:	self assembly, germanium quantum dots, quantum dot FET, germanium FET
Abstract:	This paper presents preliminary data on the transfer and output characteristics of a GeOXcladded Ge quantum dot (QD) gate Si MOSFET. The MOSFET is formed by depositing cladded QDs above the SiO2 gate insulator formed on p- Si region, sandwiched between n-type source and drain. Ge (~ 2 to 8 nm) nanoparticles, cladded with GeOX (~1nm) layers, are deposited using site-specific self-assembly. In addition, threshold shift in a nonvolatile memory structure, having cladded Ge dots, is also presented. The aim here is to fabricate floating QD gate high performance nonvolatile memory scalable to 22 nm processing.
ISBN:	978-1-4398-1782-7
Pages:	702
Hardcopy:	$179.95

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