Nanotech 2009 Vol. 1
Nanotech 2009 Vol. 1
Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics

Nano Fabrication Chapter 1

p-Type Single-Wall Garbon Nanotube Network on n-Type Si for Heterojunction Photovoltaic Cells

Authors: Z. Li, Y. Xu, V. Saini, E. Dervishi, M. Mahmood, A.R. Biris, A.S. Biris

Affilation: University of Arkansas at Little Rock, United States

Pages: 53 - 56

Keywords: heterojunction photovoltaic cells, SWNT, n-Type Si

Abstract:
The solar cells based on high-density p-n heterojunctions between single wall carbon nanotubes (SWNTs) and n-type crystalline silicon were produced with airbrushing technique. The SWNTs/n-Si heterojunction is rectifying. Under optical excitation the numerous heterojunctions formed between the semitransparent SWNTs thin coating and the n-type silicon substrate generate electron-hole pairs, which are then split and transported through SWNTs (holes) and n-Si (electrons), respectively. The nanotubes serve as both photogeneration sites and a charge carriers collecting and transport layer. It was also found that the thionyl chloride (SOCl2)-treatment of SWNT coating films can lead to a significant increase in the conversion efficiency through re-adjusting the Fermi level and increasing the carrier concentration and mobility of the nanotube network. Initial tests have shown a power conversion efficiency of above 3%, proving that SOCl2 treated-SWNTs/n-Si is a potentially suitable configuration for making solar cells.

p-Type Single-Wall Garbon Nanotube Network on n-Type Si for Heterojunction Photovoltaic Cells

ISBN: 978-1-4398-1782-7
Pages: 702
Hardcopy: $179.95