Authors: Y. Oritsuki, M. Yokomiti, T. Sakuda, N. Sadachika, M. Miyake, T. Kajiwara, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
Affilation: Hiroshima-University, Japan
Pages: 893 - 896
Keywords: surface potential based, LDMOS, compact model, HV
We present here the high-voltage MOSFET model HiSIM-HV based on the complete surface-potential description. The model is valid both for symmetrical and asymmetrical structures with scaling properties for any structural variations valid for wide range of bias conditions. The predictability of the developed model is discussed with examples of various device parameter variations. The optimization scheme of the high-voltage MOSFET device structure with the help of the compact HiSIM-HV model is also discussed.