Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

HiSIM-HV: a complete surface-potential-based MOSFET model for High Voltage Applications

Authors:Y. Oritsuki, M. Yokomiti, T. Sakuda, N. Sadachika, M. Miyake, T. Kajiwara, U. Feldmann, H.J. Mattausch, M. Miura-Mattausch
Affilation:Hiroshima-University, JP
Pages:893 - 896
Keywords:surface potential based, LDMOS, compact model, HV
Abstract:We present here the high-voltage MOSFET model HiSIM-HV based on the complete surface-potential description. The model is valid both for symmetrical and asymmetrical structures with scaling properties for any structural variations valid for wide range of bias conditions. The predictability of the developed model is discussed with examples of various device parameter variations. The optimization scheme of the high-voltage MOSFET device structure with the help of the compact HiSIM-HV model is also discussed.
HiSIM-HV: a complete surface-potential-based MOSFET model for High Voltage ApplicationsView PDF of paper
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