Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Physical Carrier Mobility in Compact Model of Independent Double Gate MOSFET

Authors:M. Reyboz, P. Martin, O. Rozeau, T. Poiroux
Affilation:cea-leti, FR
Pages:881 - 884
Keywords:DG MOSFET, Independent gates, continuous model, mobility
Abstract:We have already developed an explicit threshold voltage based compact model of independent double gate MOSFET which well works for gate length between 30 nm and 1µm, or more. However, the mobility was assumed constant. In this paper, we present the model with adapted mobility degradation and velocity saturation models.
Physical Carrier Mobility in Compact Model of Independent Double Gate MOSFETView PDF of paper
ISBN:978-1-4200-8505-1
Pages:940
Hardcopy:$159.95
 
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