Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Physical Carrier Mobility in Compact Model of Independent Double Gate MOSFET

Authors: M. Reyboz, P. Martin, O. Rozeau, T. Poiroux

Affilation: cea-leti, France

Pages: 881 - 884

Keywords: DG MOSFET, Independent gates, continuous model, mobility

Abstract:
We have already developed an explicit threshold voltage based compact model of independent double gate MOSFET which well works for gate length between 30 nm and 1µm, or more. However, the mobility was assumed constant. In this paper, we present the model with adapted mobility degradation and velocity saturation models.

Physical Carrier Mobility in Compact Model of Independent Double Gate MOSFET

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95