Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET

Authors:R. Chaujar, R. Kaur, M. Saxena, M. Gupta, R.S. Gupta
Affilation:University of Delhi, IN
Pages:873 - 876
Keywords:ATLAS, DMG, MOSFET, modeling
Abstract:In this paper, compact analytical threshold voltage model for multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) MOSFET is presented and investigated using ATLAS device simulator. The novel device continues merits of recessed channel and dual material gate (DMG) architecture. It has been seen that MLGEWE-RC MOSFET exhibits significant enhancement in terms improved gate controllability over the channel, carrier transport efficiency and hence, the driving current and hot carrier effect immunity. Thus, MLGEWE-RC MOSFET design acts as an attractive solution for the ongoing integration process in analog design and high-speed integration circuits below the 65-nm technology node.
Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFETView PDF of paper
ISBN:978-1-4200-8505-1
Pages:940
Hardcopy:$159.95
 
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