 | Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET | |
| Authors: | R. Chaujar, R. Kaur, M. Saxena, M. Gupta, R.S. Gupta |
| Affilation: | University of Delhi, IN |
| Pages: | 873 - 876 |
| Keywords: | ATLAS, DMG, MOSFET, modeling |
| Abstract: | In this paper, compact analytical threshold voltage model for multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) MOSFET is presented and investigated using ATLAS device simulator. The novel device continues merits of recessed channel and dual material gate (DMG) architecture. It has been seen that MLGEWE-RC MOSFET exhibits significant enhancement in terms improved gate controllability over the channel, carrier transport efficiency and hence, the driving current and hot carrier effect immunity. Thus, MLGEWE-RC MOSFET design acts as an attractive solution for the ongoing integration process in analog design and high-speed integration circuits below the 65-nm technology node. |
| ISBN: | 978-1-4200-8505-1 |
| Pages: | 940 |
| Hardcopy: | $159.95 |
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