MOSFET Compact Modeling Issues for Low Temperature (77 K

	Nanotech 2008 Vol. 3 Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	MOSFET Compact Modeling Issues for Low Temperature (77 K - 200 K) Operation
Authors:	P. Martin, M. Cavelier, R. Fascio, G. Ghibaudo
Affilation:	CEA-LETI Minatec, FR
Pages:	865 - 868
Keywords:	MOSFET, low temperature, compact model
Abstract:	Advanced compact models are evaluated for simulation of mixed analog-digital circuits working at low temperature (77 to 200 K). This evaluation is performed on a dual gate oxide CMOS technology with 0.18 µm / 1.8 V and 0.35 µm / 3.3 V MOSFET transistors. A detailed temperature analysis of some physical effects is performed. Specific effects, such as anomalous narrow width effect or quantization of the inversion charge, are observed at low or intermediate temperature. Some improvements of compact models will allow a very accurate description of MOS transistors at low temperature.
ISBN:	978-1-4200-8505-1
Pages:	940
Hardcopy:	$159.95

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MOSFET Compact Modeling Issues for Low Temperature (77 K - 200 K) Operation