Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping

Authors: V. Hariharan, R. Thakker, M.B. Patil, J. Vasi, V.R. Rao

Affilation: IIT Bombay, India

Pages: 857 - 860

Keywords: double-gate, mosfet, model, mobility, saturation, doping, vertical-field

Abstract:
In this paper we present a completely closed-form inversion charge-based model for the drain current and conductance of a symmetric double-gate MOSFET based on the drift-diffusion transport mechanism, that takes into account vertical field mobility degradation, lateral field mobility degradation and body doping, and that is valid in sub-threshold as well as above-threshold. The key novelty in this work is that the physical model for velocity saturation has been retained as an integral part of the model derivation, as opposed to adding its effect on the mobility at the end by considering an averaged electric field.

Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95