Authors: X. Xi, F. Li, B. Tudor, W. Wang, W. Liu, F. Lee, P. Wang, N. Subba, J-S Goo
Affilation: Synopsys Inc, United States
Pages: 841 - 844
Keywords: impact ionization, SOI technology, parasitic BJT
The impact ionization (II) model accuracy issue in industry standard SOI MOSFET is discussed in the paper. Based on Medici 2D simulation study, an improved impact ionization model is proposed which can capture the voltage and geometry dependence for impact ionization current contributed by the parasitic BJT collector current. The model is implemented into the BSIMSOI infrastructure in HSPICE. A reasonably good fit of the model to the 2D simulation results is obtained. The improved model facilitates the BSIMSOI application into deep subthreshold to accumulation regions where accurate II model is a prerequisite for novel memory circuit simulation.