Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Improved layout dependent modeling of the base resistance in advanced HBTs

Authors:S. Lehmann, M. Schroter
Affilation:University of Technology Dresden, DE
Pages:795 - 800
Keywords:bipolar transistor, SiGe HBT, base resistance, compact modeling
Abstract:Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been verified for a variety of layout and technology parameters.
Improved layout dependent modeling of the base resistance in advanced HBTsView PDF of paper
ISBN:978-1-4200-8505-1
Pages:940
Hardcopy:$159.95
 
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