 | Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
Improved layout dependent modeling of the base resistance in advanced HBTs | |
| Authors: | S. Lehmann, M. Schroter |
| Affilation: | University of Technology Dresden, DE |
| Pages: | 795 - 800 |
| Keywords: | bipolar transistor, SiGe HBT, base resistance, compact modeling |
| Abstract: | Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been verified for a variety of layout and technology parameters. |
| ISBN: | 978-1-4200-8505-1 |
| Pages: | 940 |
| Hardcopy: | $159.95 |
| Order: | Mail/Fax Form |
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