Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Improved layout dependent modeling of the base resistance in advanced HBTs

Authors: S. Lehmann, M. Schroter

Affilation: University of Technology Dresden, Germany

Pages: 795 - 800

Keywords: bipolar transistor, SiGe HBT, base resistance, compact modeling

Abstract:
Existing equations for describing the layout dependent base resistance are improved and extended for heterojunction bipolar transistors (HBTs) in advanced process technologies. The new equations have been developed using quasi-3D device simulation and have been verified for a variety of layout and technology parameters.

Improved layout dependent modeling of the base resistance in advanced HBTs

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95