Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Modeling of Floating-Body Devices Based on Complete Potential Description

Authors: N. Sadachika, T. Murakami, M. Ando, K. Ishimura, K. Ohyama, M. Miyake, H.J. Mattausch, M. Miura-Mattausch

Affilation: Hiroshima-University, Japan

Pages: 778 - 781

Keywords: floating-body, SOI, double-gate, MOSFET, modeling

Abstract:
Advanced MOSFETs exploit the carrier confinement to suppress the short-channel effect, which is realized by reducing the bulk layer thickness. The ongoing developments of the multi-gate MOSFET as well as the fully-depleted SOI-MOSFET with ultra thin silicon layer are proved to be applicable beyond the 50nm technology node. However, these advanced devices suffer from the floating-body effect caused by an unfixed body node, which plays an important role for the device performances. Here we present a modeling approach, based on a consistent potential description, how to simplify the problem of solving the Poisson equation with the floating-body node. The solution to the charge storage within the substrate is also discussed.

Modeling of Floating-Body Devices Based on Complete Potential Description

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95