Authors: M. Miura-Mattausch, M. Chan, J. He, H. Koike, H.J. Mattausch, T. Nakagawa, Y.J. Park, T. Tsutsumi, Z. Yu
Affilation: Hiroshima University, Japan
Pages: 764 - 769
Keywords: multi-gate MOSFET, compact model
We are reporting the construction of a common platform for compact model development based on the Verilog-A language and in particular a framework for efficient development of multi-gate MOSFET models for circuit simulation. Phenomena expected to become important for the multi-gate MOSFET generation are modeled on the basis of their physical origin. These phenomena are implemented into the specific multi-gate MOSFET models by plugging in modules from the common platform. Parasitic resistive and capacitive contributions are also modularized to represent the complete circuit performance of the multi-gate MOSFET model for efficient circuit development.