Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs

Authors: G. Zhu, G.H. See, X. Zhou, Z. Zhu, S. Lin, C. Wei, J. Zhang, A. Srinivas

Affilation: Nanyang Technological University, Singapore

Pages: 760 - 763

Keywords: Quasi-2D, Schottky barrier, three terminal, undoped, double-gate

Abstract:
The quasi-2D method has been used to account for short-channel effects in PN-junction MOSFETs. Recently some authors applied the quasi-2D solution to SB MOSFETs to derive potential profiles. In this paper, an improved quasi-2D solution is proposed which is valid for arbitrary terminal bias with respective to any reference voltage and applicable to asymmetric SB-DG devices. A terminal-bias dependent characteristic length is physically derived, which has been missed in all previous literature.

Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95