Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

New Properties and New Challenges in MOS Compact Modeling

Authors:X. Zhou, G.H. See, G. Zhu, Z. Zhu, S. Lin, C. Wei, A. Srinivas, J. Zhang
Affilation:Nanyang Technological University, SG
Pages:750 - 755
Keywords:compact model, multiple-gate, nanowire, MOSFET, unified regional modeling
Abstract:As bulk-MOS technology is approaching its fundamental limit, non-classical devices such as multiple-gate (MG) and silicon-nanowire (SiNW) transistors emerge as promising candidates for future generation device building blocks. This trend poses new challenges in developing a compact model suitable for these new device structures, and requires a paradigm shift in the core model structure. Conventional bulk-MOS models are based on four-terminal unipolar conduction in a doped channel with ideal symmetrical PN-junction source/drain contacts. In MG/NW MOSFETs, however, the device becomes three-terminal with undoped channel and possible bipolar conduction, and source/drain contacts become an integral part of intrinsic channel. Source/drain asymmetry, either intentional or unintentional, in a theoretically symmetric MOSFET also becomes important to be captured in a compact model, which is nontrivial in a model that depends on terminal source/drain swapping at the circuit level. This paper discusses these new challenges and demonstrates solutions based on the unified regional modeling (URM) approach.
New Properties and New Challenges in MOS Compact ModelingView PDF of paper
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