Authors: A. Spessot, F. Gattel, P. Fantini, A. Marmiroli
Affilation: STMicroelectronics, Italy
Pages: 825 - 828
Keywords: gain, mobility, strain
The impressive downscaling of CMOS technology and its more and more massive introduction in System-on-chip (SoC) oriented applications require comprehensive modeling approach able to describe such different world (digital and analog) starting from a single technological platform. In this pape we deep insight the modeling of gain, a key parameter ruling the analog performances of advances CMOS technologies, in relation with their layout dependence affected by the shallow trench isolation induced mechanical stress.