Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Modeling of gain in advanced CMOS technologies

Authors:A. Spessot, F. Gattel, P. Fantini, A. Marmiroli
Affilation:STMicroelectronics, IT
Pages:825 - 828
Keywords:gain, mobility, strain
Abstract:The impressive downscaling of CMOS technology and its more and more massive introduction in System-on-chip (SoC) oriented applications require comprehensive modeling approach able to describe such different world (digital and analog) starting from a single technological platform. In this pape we deep insight the modeling of gain, a key parameter ruling the analog performances of advances CMOS technologies, in relation with their layout dependence affected by the shallow trench isolation induced mechanical stress.
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