Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Modeling of gain in advanced CMOS technologies

Authors:A. Spessot, F. Gattel, P. Fantini, A. Marmiroli
Affilation:STMicroelectronics, IT
Pages:825 - 828
Keywords:gain, mobility, strain
Abstract:The impressive downscaling of CMOS technology and its more and more massive introduction in System-on-chip (SoC) oriented applications require comprehensive modeling approach able to describe such different world (digital and analog) starting from a single technological platform. In this pape we deep insight the modeling of gain, a key parameter ruling the analog performances of advances CMOS technologies, in relation with their layout dependence affected by the shallow trench isolation induced mechanical stress.
Modeling of gain in advanced CMOS technologiesView PDF of paper
ISBN:978-1-4200-8505-1
Pages:940
Hardcopy:$159.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map