Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Modeling of gain in advanced CMOS technologies

Authors: A. Spessot, F. Gattel, P. Fantini, A. Marmiroli

Affilation: STMicroelectronics, Italy

Pages: 825 - 828

Keywords: gain, mobility, strain

Abstract:
The impressive downscaling of CMOS technology and its more and more massive introduction in System-on-chip (SoC) oriented applications require comprehensive modeling approach able to describe such different world (digital and analog) starting from a single technological platform. In this pape we deep insight the modeling of gain, a key parameter ruling the analog performances of advances CMOS technologies, in relation with their layout dependence affected by the shallow trench isolation induced mechanical stress.

Modeling of gain in advanced CMOS technologies

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95