Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 5: Modeling & Simulation of Microsystems

Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs

Authors:C. Kernstock, M. Karner, O. Baumgartner, A. Gehring, S. Holzer, H. Kosina
Affilation:Global TCAD Solutions, AT
Pages:541 - 544
Keywords:MOSFETs, TCAD, Numerical device simulation
Abstract:An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows to extract the relevant transistor parameters, based on data which are typically available within a process flow, is presented.
Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETsView PDF of paper
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