Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Modeling & Simulation of Microsystems Chapter 5

Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs

Authors: C. Kernstock, M. Karner, O. Baumgartner, A. Gehring, S. Holzer, H. Kosina

Affilation: Global TCAD Solutions, Austria

Pages: 541 - 544

Keywords: MOSFETs, TCAD, Numerical device simulation

Abstract:
An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows to extract the relevant transistor parameters, based on data which are typically available within a process flow, is presented.

Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95