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 | Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 5: Modeling & Simulation of Microsystems |
| | Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs | | Authors: | C. Kernstock, M. Karner, O. Baumgartner, A. Gehring, S. Holzer, H. Kosina | | Affilation: | Global TCAD Solutions, AT | | Pages: | 541 - 544 | | Keywords: | MOSFETs, TCAD, Numerical device simulation | | Abstract: | An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows to extract the relevant transistor parameters, based on data which are typically available within a process flow, is presented. | | ISBN: | 978-1-4200-8505-1 |
| Pages: | 940 |
| Hardcopy: | $199.99 |
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