 | Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 5: Modeling & Simulation of Microsystems |
Structure Generation for the Numerical Simulation of Nano-Scaled MOSFETs | |
| Authors: | C. Kernstock, M. Karner, O. Baumgartner, A. Gehring, S. Holzer, H. Kosina |
| Affilation: | Global TCAD Solutions, AT |
| Pages: | 541 - 544 |
| Keywords: | MOSFETs, TCAD, Numerical device simulation |
| Abstract: | An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows to extract the relevant transistor parameters, based on data which are typically available within a process flow, is presented. |
| ISBN: | 978-1-4200-8505-1 |
| Pages: | 940 |
| Hardcopy: | $159.95 |
| Order: | Mail/Fax Form |
| Special: | 3 CD Set — 15% off with Free Shipping |
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