Authors: C. Kernstock, M. Karner, O. Baumgartner, A. Gehring, S. Holzer, H. Kosina
Affilation: Global TCAD Solutions, Austria
Pages: 541 - 544
Keywords: MOSFETs, TCAD, Numerical device simulation
An accurate and predictive numerical simulation of MOS transistor in the deca-nanometer channel length regime relies on the precise mapping of the physical device into a simulation model. A quick and accurate method which allows to extract the relevant transistor parameters, based on data which are typically available within a process flow, is presented.