Authors: D. Vasileska, K. Raleva, S.M. Goodnick
Affilation: Arizona State University, United States
Pages: 537 - 540
Keywords: lattice heating, FD-SOI devices, Monte Carlo methods
We have developed the first self-consistent thermal electron-phonon simulator which solves the Boltzmann transport equation for the electrons and the energy balance equations for phonons, and as such allows us to make realistic estimates on the on-current degradation in FD-SOI devices with SIO2 and high-k dielectrics as gate oxides. For the first time we present a detailed study on the influence of lattice heating on the on-current for different generations of FD-SOI devices. Non-scationary transport (velocity overshoot) present in the smallest structures being investigated is responsible for the smaller thermal degradation in the smallest geometry device structures being considered.