Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Modeling & Simulation of Microsystems Chapter 5

The static behavior of RF MEMS capacitive switches in contact

Authors: H.M.R. Suy, R.W. Herfst, P.G. Steeneken, J. Stulemeijer and J.A. Bielen

Affilation: NXP Semiconductors Research, Netherlands

Pages: 517 - 520

Keywords: RF MEMS, capacitive switch, contact, model

Abstract:
A method is presented in which surface topography characterization is combined with the electrical measurement of the contact mechanics under electrostatic loading. Contact characteristics such as the surface separation versus the applied pressure, and the applied pressure versus the contact area, are derived. Based on these results, a contact model is validated. In combination with a compact model of a capacitive switch, this contact model is used to predict the contact behavior of different switch designs

The static behavior of RF MEMS capacitive switches in contact

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95