Authors: S.P. Kumar, A. Agrawal, R. Chaujar, M. Gupta, R.S. Gupta
Affilation: Semiconductor Device Research Laboratory, India
Pages: 607 - 610
Keywords: linearity, AlGaN/GaN HEMT, DMG
HEMTs are promising devices for RF wireless communications. For wireless communication applications and RF circuit design, linearity is always one of the most important issues. This is because the devices used in the system may produce non-linear distortion and thus degrade the S/N ratio of the system. For short gate HEMTs, the transconductance and output conductance become important sources of non-linearity. Thus, the device structure needs to be tailored to improve the RF performance of devices used in the system. In this work, linearity performance of Dual Material Gate (DMG) HEMT is studied and the results compared with the conventional Single Metal Gate (SMG) HEMT using ATLAS device simulator. Thus, by using DMG architecture, we can minimize the linearity degradation and improve the RF performance of the AlGaN/GaN HEMT.