Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Modeling & Simulation of Microsystems Chapter 5

A Novel Dual Gate Strained-Silicon Channel Trench Power MOSFET For Improved Performance

Authors: R.S. Saxena, M.J. Kumar

Affilation: Indian Institute of Technology, New Delhi, India

Pages: 602 - 604

Keywords: strained Si, SiGe, trench gate, dual gate, power MOSFET, compositionally graded SiGe buffer

We propose a new dual gate trench power MOSFET with strained Si channel that not only provides lower on resistance than the conventional trench MOSFET but also enables the in-circuit configurability of its characteristics for optimized circuit applications. In the proposed structure, we have split the gate of a conventional trench MOSFET structure into two parts. In the resulting structure, one of the two gates controls the inversion charge of the channel whereas the other gate controls the accumulation charge in the drift region. Using 20% Ge mole fraction in the SiGe body with compositionally graded SiGe buffer in the drift region enables us to create the strain in the channel along with the graded strain in accumulation region. As a result, the proposed structure exhibits 10% enhancement in current drivability, 20% reduction in the on-resistance, 17% reduction in the switching delays and 72% improvement in peak transconductance at the cost of only 12% reduction in the breakdown voltage when compared to conventional trench gate MOSFET. We have also shown that the flexibility of applying suitable different bias voltages at the two gates may significantly improve device performance.

A Novel Dual Gate Strained-Silicon Channel Trench Power MOSFET For Improved Performance

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95