Authors: L. Zhang, J. He, F. Liu, J. Zhang, J. Feng, C. Ma
Affilation: Peking University, China
Pages: 590 - 593
Keywords: device physics, compact modeling, surrounding-gate MOSFET, carrier-based model
An explicit carrier-based core model for the long channel undoped surrounding-gate MOSFETs is presented in the paper An analytic approximation solution to the carrier concentration is developed from a simplified Taylor expansion of the exact solution of Poisson’s equation of the surrounding-gate MOSFETs, instead to resorting to the Newton-Raphson numerical iterative. The analytic approximation not only gives accurate dependences of the carrier concentration on the geometry structures and bias, compared with the Newton-Raphson numerical method, but also is used to develop an explicit current-voltage model of the surrounding-gate MOSFETs combined with Pao-Pah current formulation. The presented explicit model is found to be computationally more efficient than the previous numerical Newton-Raphson iterative while more accurate than the previously published explicit model.