Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Modeling & Simulation of Microsystems Chapter 5

Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools

Authors: R. Chaujar, R. Kaur, M. Saxena, M. Gupta, R.S. Gupta

Affilation: Semiconductor Devices Research Laboratory, India

Pages: 586 - 589

Keywords: ATLAS, concave, DMG, intrinsic delay, RF, stability

Abstract:
The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower intrinsic delay pertained by L-DUMGAC architecture strengthens the idea of using it for switching applications, thereby giving a new opening for high frequency wireless communications. Thus, L-DUMGAC MOSFET design acts as an attractive solution for the ongoing integration process for LNA design and RF applications below the 65-nm technology node.

Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95