Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools

	Nanotech 2008 Vol. 3 Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 5: Modeling & Simulation of Microsystems
	Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools
Authors:	R. Chaujar, R. Kaur, M. Saxena, M. Gupta, R.S. Gupta
Affilation:	Semiconductor Devices Research Laboratory, IN
Pages:	586 - 589
Keywords:	ATLAS, concave, DMG, intrinsic delay, RF, stability
Abstract:	The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower intrinsic delay pertained by L-DUMGAC architecture strengthens the idea of using it for switching applications, thereby giving a new opening for high frequency wireless communications. Thus, L-DUMGAC MOSFET design acts as an attractive solution for the ongoing integration process for LNA design and RF applications below the 65-nm technology node.
ISBN:	978-1-4200-8505-1
Pages:	940
Hardcopy:	$159.95

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