Deposition of functional PZT films as actuators in MEMS devices by high rate sputtering

	Nanotech 2008 Vol. 3 Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 2: Sensors & Systems
	Deposition of functional PZT films as actuators in MEMS devices by high rate sputtering
Authors:	H.-J. Quenzer, R. Dudde, H. Jacobsen, B. Wagner, H. Föll
Affilation:	Fraunhofer ISIT, DE
Pages:	207 - 210
Keywords:	actuator, MEMS, PZT, gas flow sputtering
Abstract:	Crack and void free polycrystalline Lead Zirconate Titanate (PZT) films in the range of 5 µm to 10 µm have been successfully deposited on silicon substrates using a novel high rate gas flow sputtering process. Deposition rates of 200-250 nm/min were observed. These high sputter rates are about 20 - 25 times higher than reported from reactive magnetron sputtering and demonstrate the potential of this sputter technique. Based on this deposition process a membrane actuator consisting of a SOI layer and a sputtered PZT thin film was prepared. The sputtered PZT layers show a high dielectric constant er between 1000 and 1800 and a distinct ferroelectric hysteresis loop with a remanent polarisation of 17 µC/cm2 and a coercive field strength of 5.4 kV/mm.
ISBN:	978-1-4200-8505-1
Pages:	940
Hardcopy:	$159.95

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