Authors: S.C. Chiu, Y.Y. Li
Affilation: National Chung Cheng University, Taiwan
Pages: 138 - 141
Keywords: silicon oxide, nanowire, thermal evaporation
Impurity-free silicon oxide nanowires were synthesized on a 3 cm x 3 cm alumina plate uniformly by thermal evaporation of a mixture of powder of graphite powders and Si-SiOx particles under argon atmosphere with a flow rate of 50 sccm at 1100 oC for 3 hours. The as-synthesized products characterized by field-emission scanning electron microscopy, field-emission transmission electron microscopy and energy-dispersive spectroscopy show that SiOx nanowires were of diameters ranging from 50-100 nm and the height is up to several millimeters. The growth mechanism of SiOx nanowires was studied and suggested to be the vapor-solid (VS) process.