Authors: Y-T Kuo, H-Y Lo, Y. Li
Affilation: National Chiao Tung University, Taiwan
Pages: 88 - 91
Keywords: nanogaps, palladium, field emission display, surface conduction electron-emitter, low turn-on voltage, high focus capability, FDTD-PIC
Nanometer scale gaps (nanogaps) has been wildly used as electrode in molecular electronics [1,2], biosensor , and vacuum microelectronics . However, the difficult from the fabrication limits the development of such technique until the surface conduction electron-emitter (SCE) for the flat panel displays (FPDs) has been provided by Sakai et al . Recently, the field emission efficiency of the SCE device has been studied, and the result shows the structure of the nanogap similar to the type 2 in Fig. 1 will be helpful to generate the high field emission efficiency . After Tsai et al  have succeeded in fabricating a new type of SCE device using hydrogen absorption under high pressure treatment. A well-defined gap size and simple process can be given by this method which is accompanied by extensive atomic migration during the hydrogen treatment. The angle of the nanogap is similar to the type 2 in Fig. 1, such that the better field emission efficiency is expected. In this paper, to explore the electron-emission behaviors in the novel SCE device, the FDTD-PIC simulation technique  is employed to solve a set of 3D Maxwell equations coupled with the Lorentz equation. Moreover, the property of the low turn-on voltage and high focus capability in the novel SCE device has been analyzed.