Nano Science and Technology Institute
Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 1: Photonics & Nanowires
 

Atomistic Simulation on Boron Transient Diffusion during in Pre-amorphized Silicon Substrate

Authors:S-Y Park, B-G Cho, T. Won
Affilation:Inha University, KR
Pages:50 - 53
Keywords:transient enhanced diffusion, pre-amorphization implant, kinetic Monte Carlo
Abstract:We investigated the boron diffusion in the silicon posterior to PAI (pre-amorphization implant) in order to understand the mechanism for amorphization process and generation-recombnation of defects. Silicon atoms were weighed as a new pre-amorphization implant (PAI) sources and we compared the effects of Si-PAI with those of Ge-PAI at the same condition. The Kinetic Monte Carlo (KMC) investigation of the interstitial distribution revealed that Si-PAI produces more amounts of interstitials than the case of Ge-PAI whilst Ge-PAI makes interstitials move further up to the surface than the Si-PAI case during the annealing process.
Atomistic Simulation on Boron Transient Diffusion during in Pre-amorphized Silicon SubstrateView PDF of paper
ISBN:978-1-4200-8505-1
Pages:940
Hardcopy:$159.95
 
Order:Mail/Fax Form
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map