 | Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Photonics & Nanowires |
Atomistic Simulation on Boron Transient Diffusion during in Pre-amorphized Silicon Substrate | |
| Authors: | S-Y Park, B-G Cho, T. Won |
| Affilation: | Inha University, KR |
| Pages: | 50 - 53 |
| Keywords: | transient enhanced diffusion, pre-amorphization implant, kinetic Monte Carlo |
| Abstract: | We investigated the boron diffusion in the silicon posterior to PAI (pre-amorphization implant) in order to understand the mechanism for amorphization process and generation-recombnation of defects. Silicon atoms were weighed as a new pre-amorphization implant (PAI) sources and we compared the effects of Si-PAI with those of Ge-PAI at the same condition. The Kinetic Monte Carlo (KMC) investigation of the interstitial distribution revealed that Si-PAI produces more amounts of interstitials than the case of Ge-PAI whilst Ge-PAI makes interstitials move further up to the surface than the Si-PAI case during the annealing process. |
| ISBN: | 978-1-4200-8505-1 |
| Pages: | 940 |
| Hardcopy: | $159.95 |
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