Authors: T. Kikkawa
Affilation: Hiroshima University, Japan
Pages: 600 - 603
Keywords: silylation, hardening, mesoporous silica, zeolite
Pure silica zeolite films were prepared for ultra-low-k interlayer dielectrics in ultra-large integrated circuits by both hydrothermal crystallization using tertabuthylammonium hydroxide, tetraethylorthosilicate and ethylalcohol, and vapor phase transport synthesis using ethylene diamine and triethylamine. Self-assembled mesoporous silica was formed by use of a triblock copolymer surfactant such as polyoxyethylene-polyoxypropylene-polyoxyethylene. Silylation hardening was carried out by 1,3, 5, 7 tetramethylcyclotetrasiloxiane (TMCTS) vapor treatment. The effect of TMCTS and zeolite processes on the characteristics of mesoporous silica zeolite films were investigated. It is found that the zeolite formation by hydrothermal crystallization and vapor phase transport can reduce O-H bond in the silica films, resulting in the reduction of leakage current by a factor of 1/10. The TMCTS vapor treatment can reduce the leakage current by 4 orders of magnitude due to the decrease of Si-OH and O-H bonds. The elastic modulus of 5.18 GPa and the dielectric constant of 1.96 were achieved simultaneously by TMCTS silylation hardening process for the mesoporous silica zeolite thin film.