Authors: B. Michel, A. Gollhardt, J. Keller
Affilation: Fraunhofer Institute for Reliability and Microintegration, Germany
Pages: 222 - 225
Keywords: nanoDAC, fibDAC, nanodeformation, residual stress measurement
The paper presents two methods for deformation measurement at the nanoscale level. The first method is based on Scanning Probe Microscopy (SPM) in combination with Digital Image Correlation (DIC). The technique serves as the basis for the development of the nanoDAC method (nano Deformation Analysis by Correlation), which allows the determination and evaluation of 2D displacement fields based on SPM data. The second approach for nanoscale deformation measurements is the so-called fibDAC (FIB, Focused Ion Beam) method. It provides the classical hole drilling method for residual stress measurement for the nanoscale region. The ion beam of the FIB station is used as a milling tool which causes the stress release. With the combination of fibDAC and finite element analysis stresses of silicon microstructures of MEMS devices or at other pre-stressed materials or surface coatings can be determined. Both presented methods can be applied for experimental reliability evaluation in microelectronics packaging, MEMS and NEMS. In addition residual stress determination at ultrathin layers and at microstructural features of bulk materials can be approached.