Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 1
Nanotechnology 2008: Materials, Fabrication, Particles, and Characterization - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 1

Carbon Nano Structures & Applications Chapter 1

Chemical doping by sulfuric acid in double wall carbon nanotubes

Authors: P. Puech, A. Ghandour, A. Sapelkin, E. Flahaut, D. Dunstan, W. Bacsa

Affilation: CEMES CNRS Univ Toulouse, France

Pages: 23 - 26

Keywords: nanotubes, doping, Raman spectroscopy, doublle wall carbon nanotubes

Charge transfer due to chemical doping in carbon nanotubes [1] can be detected through changes in the band shape and spectral shifts of the Raman G-band. In double wall carbon nanotubes, the inner tube is well protected from the environment. Contributions of the inner tube to the Raman G-band can be detected and serve as a reference. Using the influence of sulfuric acid on G-band, a method has been proposed by Kim et al [2,3] to determine the purity of a sample and determining the ratio of DWNT to SWNT using Raman spectroscopy. We find that by combining doping with sulfuric acid and high hydrostatic pressure [4], we can determine the composition of our sample with higher accuracy and we propose empirical parameters to fit the G-band line shape. Our results reveal clearly electronic coupling of the two tube walls related to a spectral band at 1560cm-1 which changes with pressure at the same rate as the outer tube. [1] G. Chen et al Phys. Rev. Lett. 90, 257403 (2003) [2] Y.A. Kim et al. Chem. Phys. Lett. 420, 377 (2006) [3] W. Zhou et al. Phys. Rev. B 71, 205423 (2005) [4] P. Puech et al. Phys. Rev. B73, 233408 (2006)

Chemical doping by sulfuric acid in double wall carbon nanotubes

ISBN: 978-1-4200-8503-7
Pages: 1,118
Hardcopy: $159.95