Authors: S.C. Brugger, A. Wirthmueller and A. Schenk
Affilation: ETH Zürich, Switzerland
Pages: 555 - 558
Keywords: Monte Carlo, quantum transport, silicon, double-gate MOSFET
In a previous work we proposed a one-particle Monte-Carlo method based on equations for the currents. Our method has the advantage of being able to take into account arbitrary generation-recombination processes self-consistently. Recently, we extended the method to include the quantum potential term in a self-consistent way and free of the problems encountered in other Monte-Carlo methods. Our method allows for any geometry (in contrast to the 1D-Schrödinger based method), quantization in all directions, tunneling, as well as the generation (as a by-product) of a model for the transport parameters in the simulated device, which can be used in usual Drift-Diffusion (DD) simulators.