Nanotech 2007 Vol. 4
Nanotech 2007 Vol. 4
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 4

Nanofabrication Chapter 3

Quantum Correction for the Current-Based One-Particle Monte-Carlo Method

Authors: S.C. Brugger, A. Wirthmueller and A. Schenk

Affilation: ETH Zürich, Switzerland

Pages: 555 - 558

Keywords: Monte Carlo, quantum transport, silicon, double-gate MOSFET

Abstract:
In a previous work we proposed a one-particle Monte-Carlo method based on equations for the currents. Our method has the advantage of being able to take into account arbitrary generation-recombination processes self-consistently. Recently, we extended the method to include the quantum potential term in a self-consistent way and free of the problems encountered in other Monte-Carlo methods. Our method allows for any geometry (in contrast to the 1D-Schrödinger based method), quantization in all directions, tunneling, as well as the generation (as a by-product) of a model for the transport parameters in the simulated device, which can be used in usual Drift-Diffusion (DD) simulators.

Quantum Correction for the Current-Based One-Particle Monte-Carlo Method

ISBN: 1-4200-6376-6
Pages: 768
Hardcopy: $139.95