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Nanotech 2007 Vol. 4
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Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 4
Nanotech 2007 Vol. 4
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 4
 
Chapter 3: Nanofabrication
 

Quantum Correction for the Current-Based One-Particle Monte-Carlo Method

Authors:S.C. Brugger, A. Wirthmueller and A. Schenk
Affilation:ETH Zürich, CH
Pages:555 - 558
Keywords:Monte Carlo, quantum transport, silicon, double-gate MOSFET
Abstract:In a previous work we proposed a one-particle Monte-Carlo method based on equations for the currents. Our method has the advantage of being able to take into account arbitrary generation-recombination processes self-consistently. Recently, we extended the method to include the quantum potential term in a self-consistent way and free of the problems encountered in other Monte-Carlo methods. Our method allows for any geometry (in contrast to the 1D-Schrödinger based method), quantization in all directions, tunneling, as well as the generation (as a by-product) of a model for the transport parameters in the simulated device, which can be used in usual Drift-Diffusion (DD) simulators.
Quantum Correction for the Current-Based One-Particle Monte-Carlo MethodView paper
ISBN:1-4200-6376-6
Pages:768
Hardcopy:$199.99
 
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