Authors: A.S. Roy, C.C. Enz and J.M Sallese
Affilation: EPFL, Switzerland
Pages: 609 - 612
Keywords: MOSFET, charge patitioning
The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high frequency advanced compact models for MOSFET devices. Recently it has been shown that WD partitioning fails for field dependent mobility or for laterally asymmetrical doping. This work is aimed at presenting a generalization of the partitioning concept.