Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs

Authors: M. Chan and W. Wu

Affilation: HKUST, Hong Kong

Pages: 590 - 593

Keywords: parasitics, FinFETs

Abstract:
The geometry-dependent parasitic components in multi-fin FinFETs are studied. The gate-resistance has a stronger dependent on the device geometry compared with the planar MOSFETs. Parasitic fringing capacitance and overlap capacitance become highly coupled to the gate geometry. In this work, we analyse the gate resistance using a distributed RC approach and study the gate capacitance using a conformal mapping approach. A physical model that account for the gate resistance and parasitic capacitive couplings between Source/Drain and gates is presented.

Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95