Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors

Authors: J.M. Lopez-Gonzalez

Affilation: Universitat Politecnica de Catalunya, Spain

Pages: 691 - 694

Keywords: numerical modeling, HBT, InGaP/GaAs

Abstract:
In this work it is investigated the consequences of the design of the emitter pedestal in the electric DC and AC performance of GaInP/GaAs HBTs using numerical modeling TCAD tool. Two different HBTs are studied and compared, DEV-A and DEV-B. Particular dimensions of the device DEV-A are: spacing between emitter mesa and base contact, LBE, is 1.3 um, emitter pedestal area is APE = 2 x 20 um2 and emitter contact area, AE, is 1 x 20 um2. DEV-B geometry is: LBE = 1 um, APE = 2.6 x 20 um2 and AE = 2 x 20 um2. Device total size and base mesa structure of these HBTs are identical. DC and AC operation parameters as: forward gain current, offset collector-emitter voltage, maximum transducer gain and the maximum stable gain are presented and explained.

Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95