Nano Science and Technology Institute
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact Model

Authors:T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, S. O’uchi and H. Koike
Affilation:AIST, JP
Pages:654 - 657
Keywords:compact model, MOSFET, double-gate
Abstract:We have proposed a compact model for four-terminal DG MOSFETs based on double charge-sheet model, with the velocity saturation effect as a function of carrier density profile inside the channel, with explicit handling of drain electric field, and with the introduction of the transition point that separates the transport-equation dominating region and the drain electric field dominating region. Although this model describes transistor ON-state and near-threshold behaviors excellently, it sometimes failed in deep-subthreshold region. We found that the transition point where the quasi-Fermi level gradient of the source side is smoothly connected with the lateral electric field of the drain side gives better behavior. Still the equation gave the drain current significantly larger than qnvSAT, where vSAT is the saturation velocity. To solve this problem, we tested a new transport equation that guarantees that the current is always smaller than qnvSAT. Although the new model behaves well in ON state, it gave too small drain current at near-threshold condition and below, when the channel length was very short. Further refinement of the model, such as including channel length shortening by the source-side built-in voltage, will be necessary for the model to achieve better agreement with real devices.
Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact ModelView PDF of paper
Order:Mail/Fax Form
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map