Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Compact Models for Asymmetric Double Gate MOSFETs

Authors: H.C. Morris, H. Abebe and E.C. Cumberbatch

Affilation: San Jose State University, United States

Pages: 649 - 653

Keywords: analytic solutions, compact model, double gate MOSFETs

Double-gate MOSFET's are one possible option to further extend CMOS scaling when planar MOSFET's have reached their scaling limit. This paper presents an analytic potential model for long-channel asymmetric double-gate (ADG) MOSFETs. The asymmetry is due to a difference in the work functions of the two gates. Taur has derived equations from the exact solution to Poisson’s and current continuity equation without the charge-sheet approximation. In previous work by the authors it was shown that, by means of the Lambert function, compact formulae could be derived from Taur’s equations for the symmetric double-gate (SDG) case. In this paper we show that these results of can be extended to the asymmetric case and we construct generalized compact formulae for an ADG device that are suitable for use in SPICE type simulators.

Compact Models for Asymmetric Double Gate MOSFETs

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95