Authors: J. He, F. Liu, W. Bian, Y. Tao, W. Wu, K. Lu, T. Wang and M. Chan
Affilation: Peking University, China
Pages: 641 - 644
Keywords: compact modeling, non-classical MOSFETs, device physics, circuit simulation
An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus it is more suitable to implement SRG MOSFET model into the circuit simulators for circuit design and application.