Nano Science and Technology Institute
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

Authors:J. He, F. Liu, W. Bian, Y. Tao, W. Wu, K. Lu, T. Wang and M. Chan
Affilation:Peking University, CN
Pages:641 - 644
Keywords:compact modeling, non-classical MOSFETs, device physics, circuit simulation
Abstract:An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus it is more suitable to implement SRG MOSFET model into the circuit simulators for circuit design and application.
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