 | Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs | |
| Authors: | J. He, W. Bian, Y. Tao, B. Li and Y. Chen |
| Affilation: | Peking University, CN |
| Pages: | 637 - 640 |
| Keywords: | compact modeling, non-classical MOSFETs, device physics, circuit simulation |
| Abstract: | A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete agreement with 2-D numerical simulation results without any fitting term or parameter |
| ISBN: | 1-4200-6184-4 |
| Pages: | 732 |
| Hardcopy: | $139.95 |
| Order: | Mail/Fax Form |
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