Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

Authors: J. He, W. Bian, Y. Tao, B. Li and Y. Chen

Affilation: Peking University, China

Pages: 637 - 640

Keywords: compact modeling, non-classical MOSFETs, device physics, circuit simulation

Abstract:
A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete agreement with 2-D numerical simulation results without any fitting term or parameter

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95