Nano Science and Technology Institute
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs

Authors:C. Galup-Montoro, M.C. Schneider and A.I.A. Cunha
Affilation:Universidade Federal da Bahia - UFBA, BR
Pages:633 - 636
Keywords:threshold voltage, intrinsic channel, undoped MOSFET, double gate MOSFET
Abstract:The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined as the value for which the mobile charge density is equal to the thermal charge density. The threshold voltage evaluated according to this definition is compared to the threshold voltage determined through the second derivative method.
Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETsView PDF of paper
ISBN:1-4200-6184-4
Pages:732
Hardcopy:$139.95
 
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