HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications

	Nanotech 2007 Vol. 3 Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3 Chapter 7: Compact Modeling
	HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications
Authors:	M. Miyake, N. Sadachika, K. Matsumoto, D. Navarro, T. Ezaki, M. Miura-Mattausch, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi and S. Miyamoto
Affilation:	Hiroshima University, JP
Pages:	621 - 624
Keywords:	MOS-Varactor, RF-applications, carrier transit delay, capacitance, accumulation mode
Abstract:	For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM. HiSIM-Varactor includes the majority carrier transit time, causing a formation delay of the accumulation/depletion condition. Good agreement with 2D device simulation result is verified up to 200GHz operation. The calculated quality factor is proved to deviate from linearity as a function of operation frequency due to the majority carrier transit delay.
ISBN:	1-4200-6184-4
Pages:	732
Hardcopy:	$139.95

Order:	Mail/Fax Form
Special:	3 CD Set — 15% off with Free Shipping
Up