Authors: M. Reyboz, O. Rozeau, T. Poiroux, P. Martin, M. Cavelier and J. Jomaah
Affilation: CEA-LETI, France
Pages: 578 - 581
Keywords: IDG MOSFET, explicit compact model, Short Channel Effects
This paper describes an explicit short channel compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparison with Atlas simulations. The model was implemented in circuit simulator in VerilogA language to design digital and analog circuits using the independent gate structures.