Nano Science and Technology Institute
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 7: Compact Modeling
 

Explicit Short Channel Compact Model of Independent Double Gate Mosfet

Authors:M. Reyboz, O. Rozeau, T. Poiroux, P. Martin, M. Cavelier and J. Jomaah
Affilation:CEA-LETI, FR
Pages:578 - 581
Keywords:IDG MOSFET, explicit compact model, Short Channel Effects
Abstract:This paper describes an explicit short channel compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparison with Atlas simulations. The model was implemented in circuit simulator in VerilogA language to design digital and analog circuits using the independent gate structures.
Explicit Short Channel Compact Model of Independent Double Gate MosfetView PDF of paper
ISBN:1-4200-6184-4
Pages:732
Hardcopy:$139.95
 
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